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| 10.08.2010 RLT9820G.doc 1 of 1 RLT9820G technical data high power infrared laserdiode structure: gaalas double heterostructure lasing wavelength: 980 nm typ. max. optical power: 20 mw, multimode package: 9 mm pin connection: 1) laser diode cathode 2) laser diode anode and photodiode cathode 3) photodiode anode maximum ratings (tc=25c) characteristic symbol rating unit optical output power p o 25 mw ld reverse voltage v r(ld) 1.5 v pd reverse voltage v r(pd) 6 v operating temperature t c -10 .. +50 c storage temperature t stg -40 .. +85 c optical-electrical char acteristics (tc = 25c) characteristic symbol test condition min typ max unit optical output power p o cw 20 mw threshold current i th cw 25 30 ma operation current i op p o = 20 mw 60 75 100 ma lasing aperture a 1x15 m2 lasing wavelength p p o = 20 mw 970 980 990 nm beam divergence // p o = 20 mw 20 25 beam divergence p o = 20 mw 45 50 differential efficiency dp o /di op p o = 20 mw 0.4 0.7 1.0 mw/ma monitor current i m p o = 20 mw 150 350 1200 a note! laserdiode must be cooled!
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